Investigation of the physical modeling of the gate-depletion effect

The physical modeling of the gate for the analysis of the gate-depletion effect is investigated. The accuracy of the assumed rigid-parabolic-band model is examined by comparing the numerical simulation with the experimental C-V data. Disagreement between calculation and measurement is observed and physical phenomena which may be responsible for it are proposed. An engineering approach to remove the disagreement is given. The presented investigations may be of general interest for modeling of heavily doped space-charge regions.<
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