A novel program-erasable capacitor using high-/spl kappa/ AlN dielectric

We demonstrate, for the first time, a novel high-/spl kappa/ AlN capacitor that can be program-erasable at voltages of /spl plusmn/4 V and that has good retention for 1T1C memory. These features are not shown by Al/sub 2/O/sub 3/, or other known single high-/spl kappa/ layer capacitors. Good data retention occurs with a threshold change of only 0.06 after /spl plusmn/4 V P/E for 10/sup 4/s and shows potentially long memory time.