Novel self-defined field emission transistors with PECVD-grown carbon nano-tubes on silicon substrates

We report the fabrication of novel field-emission transistors on silicon substrates using vertically grown carbon nano-tubes. Transistors made here are formed on clusters of carbon nano-tubes and do not need nano-lithography. The main feature of the structure is the vertically grown nano-tubes on a silicon substrate, acting as the cathodes for the field emission phenomenon. The level of emission is controlled mainly by the voltage applied between the laterally-placed gate electrode and the silicon cathode electrode. Microscale lithography can be used to fabricate well-defined arrays of transistors suitable for switching applications. Further characterization of the tubes is underway.