Lateral and vertical scaling of a QSA HBT for a 0.13/spl mu/m 200GHz SiGe:C BiCMOS technology

A 200 GHz F/sub t/ SiGe:C HBT has been integrated into a 0.13 /spl mu/m BiCMOS technology. A previous generation low complexity quasi self-aligned architecture (QSA) is scaled down both in a lateral and vertical way. Lateral sizing is obtained by using present-day step and scan tools. Vertical sizing is achieved by reducing the thermal budget of the active module and by an aggressive scaling of the SiGe:C base epitaxial layer. A deep trench module, featuring a thick oxide liner, has been developed. Excellent DC parameters and peak Ft/Fmax values of 200/160 GHz are demonstrated. The CMOS device characteristics remain unchanged by applying low thermal budget processing in the bipolar module.