GaAs HBT for power applications [power amplifier applications]

The TriQuint HBT process is based on InGaP/GaAs with 2 /spl mu/m or 3 /spl mu/m emitter lengths. The DC current gain for the new HBT3 is set to 130, breakdown voltages BVcbo, BVceo and BVbeo are 24 V, 14 V, and 7 V, respectively. F/sub T/ and F/sub max/ of 40 GHz and 65 GHz are ideally suited for the hand-set market and WLAN business from cellular bands to 802.11a/b/g frequencies. Power densities at 1.9 GHz of 0.3 mW//spl mu/m/sup 2/ are used in current power amplifiers. The cost of GaAs HBT modules has been proven to be more cost effective than SiGe based modules.