InGaN-based light-emitting diode with undercut-side wall

The experimental results of the fabricated LEDs with /spl sim/22/spl deg/ undercut side walls are reported and the performance of the fabricated undercut side wall LEDs show /spl sim/70 % enhancement in the light output. Nitride-based LEDs were achieved by controllable inductively coupled plasma reactive ion etching (ICP-RIE).