Characteristics of InGaAs quantum dots grown on tensile-strained GaAs/sub 1-x/P/sub x/

This paper reports on the optical and structural properties of In/sub 0.5/Ga/sub 0.5/As (nominal composition) quantum dots (QDs)grown on GaAs/sub 1-x/P/sub x/ for x=0-0.45. This study demonstrates that the QD ground state emission wavelength can be varied over a span of 100 nm by adjusting the P-content of the barrier layer. Thus, these structures have potential for achieving high performance laser structures in the shorter wavelength (/spl lambda/ < 1 /spl mu/m) wavelength region.