Novel FRESURF LDMOSFET devices with improved BV/sub dss/-R/sub dson/

In this letter, we propose and demonstrate a novel device based on a floating reduced surface field (FRESURF) concept which allows the realization of significantly higher breakdown voltage in a thin epitaxy-based power IC technology. The newly proposed device with the floating buried layer pulled back from the source side is able to realize an enhanced breakdown voltage (BV/sub dss/) without degrading the specific on-resistance (R/sub dson/A). BV/sub dss/-R/sub dson/A values like 47 V-0.28 m/spl Omega//spl middot/cm/sup 2/ or 93 V-0.82 m/spl Omega//spl middot/cm/sup 2/ have been realized with a conventional power IC technology without any added process complexity.