A novel fully integrated floating-gate MOSFET radiation dosimeter using V/sub TH/ extractor

A novel fully integrated MOSFET radiation dosimeter consisting of two pairs of floating-gate sensor transistors with identical geometry and two V/sub TH/ (threshold voltage) extractor circuits for the sensor transistors respectively is presented. The dosimeter output is the difference of the output of the two V/sub TH/ extractor circuits, which presents the difference of the threshold voltage of the floating gate MOSFET sensors before and after radiation. The V/sub TH/ extractor circuit has been simulated in Hspice using TSMC 0.35 /spl mu/m CMOS technology at 2.9 V power supply. Simulated results show insensitivity to V/sub DD/ variation and low power consumption of 0.44 mW.