Influence of self heating in a BiCMOS on SOI technology

Self heating in a 0.25 /spl mu/m BiCMOS technology, with different isolation structures, is characterized. Thermal resistance values for single- and multiple-emitter devices are extracted and reported. The dependence of the thermal resistance on the emitter aspect ratio is critical to take into consideration when determining the isolation scheme for devices. 2D electro-thermal simulations are performed and compared to experimental results. The impact of metallization on the self-heating in the device is examined through simulations.