Demonstration of threshold voltage control techniques for vertical-type 4-terminal double-gate MOSFETs (4T-DGFET)

Four-terminal double-gate MOSFETs (4T-DGFETs) and three-terminal (3T)-DGFETs have been fabricated on the same chip using vertical-type DGFET technology for the first time. Successful V/sub th/ control techniques are demonstrated with the fabricated vertical 4T-DGFETs. Flexible V/sub th/ controllability for each method is comprehensibly discussed. A new V/sub th/-control scheme, by managing the input timing for two gates independently, is also proposed.