Edge-shaped diamond field emission arrays

The fabrication and field emission behavior of micro-patterned polycrystalline edge-shaped diamond field emission arrays is reported. The edge-shaped diamond field emission arrays were fabricated on a silicon substrate utilizing conventional silicon patterning and etching techniques, and CVD diamond deposition via a mold transferring technique. The mold was filled with diamond using a PECVD process. The silicon was back etched to expose the diamond edges. Edge sharpening was achieved by introducing a silicon oxidation step in the mold fabrication process before the diamond deposition step. The oxide grown was /spl sim/3/spl mu/m thick. This oxidation process not only sharpened the edge but also served as a gate dielectric for the triode device. Each edge was 125/spl mu/m in length and 2/spl mu/m in width. The deposited diamond film was characterized using Raman spectroscopy. The fabricated diamond edge emitter arrays were tested in vacuum (10/sup -6/ Torr). A self-aligned gated edge emitter triode from a silicon-on-insulator (SOI) substrate was also fabricated.