Electron emission properties of gated silicon field emitter arrays for charge neutralization device in ion implantation system

The effect of the number of tips (4000 and 16000) and gate aperture (1.3 /spl mu/m and 1.6 /spl mu/m) on the energy distribution of a silicon field emitter array were investigated. Energy distribution of the emitted electrons was measured in ultrahigh vacuum using an electrostatic energy analyzer. Results showed that narrower gate aperture and less tip-numbers are necessary for narrower energy spread and smaller peak energy shift.