Improving InAs double heterostructure lasers with better confinement

The authors have conducted a theoretical study of InAs double heterostructure lasers. Carrier leakage due to drift current is shown to be the main mechanism of the injected carriers in lasers fabricated to date. Reduction of carrier leakage is shown to be possible by using wider bandgap lattice-matched material as the cladding layers. Increased optical confinement is also required to achieve the lowest possible threshold current, which strongly affects the highest lasing temperature achievable. An InAs double heterostructure employing AlAs/sub 0.16/Sb/sub 0.84/ as the cladding material is proposed. Simulation on this structure indicates that its threshold current density will be dominated by Auger recombination for most of the temperature range below 300 K, the estimated highest lasing temperature.<
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