Oxide-trap based on charge pumping (OTCP) extraction method for irradiated MOSFET Devices: Part II (Low frequencies)

We present an extraction of the OTCP (Oxide-Trap based on Charge-Pumping) method from high frequencies (HF) to low frequencies (LF). Thus, using the LF-OTCP method, the interface-trap and border-trap (switching oxide trap) are simultaneously involved in charge pumping (CP) current (I/sub cp/) measurements. We have found that radiation-induced oxide-trap (/spl Delta/N/sub 01/) is only dependent on (threshold voltage shift), AI/sub cpm.h/ (augmentation of maximum CP current at high frequencies), and /spl Delta/I/sub cpm.l/ (augmentation of maximum CP current at low frequencies). Where /spl Delta/I/sub cpm.l/ and /spl Delta/I/sub cpm.h/ can be easily obtained from vertical shift of charge pumping curve at low and high frequencies respectively, and /spl Delta/V/sub th/ from lateral one.