Modeling and characterization of a merged PiN-Schottky diode with doping compensation of the drift region

In this paper standard-cell Schottky rectifiers along with silicon-based merged PiN Schottky (MPS) and PiN diodes, which are realized using a super junction technology, have been analyzed by conducting extensive device and mixed-mode simulations through two-dimensional finite-element grid. The main issues of concern with these devices such as the forward voltage-drop, the leakage characteristic and the reverse recovery are dealt with, by highlighting the superior performances exhibited by the MPS rectifier in respect to the PiN diodes. Basics on the used technology are also reported, by focusing on the high voltage capability obtainable along with the low forward voltage-drop during the on-state conduction. The reverse recovery behavior pertaining to the MPS diode has been analyzed by resorting to several simulations of the internal plasma dynamics.