Broadband GaAs-oscillators of mm-range [utilizing Gunn diodes]

In this paper, the design and performance of mm-range broadband oscillators in wave guide, coaxial-wave guide and microstrip configurations are considered. The power, frequency and temperature characteristics of the offered oscillators are both experimentally and theoretically investigated. As active elements of oscillators, GaAs-Gunn diodes are used, both as developed and made in the faculty of semiconductor and vacuum electronics, and commercially available industrial GaAs-Gunn diodes.