The application of scanning capacitance microscopy in device failure analysis [doping profile determination]

In this paper, we present the application of scanning capacitance microscopy (SCM) in the failure analysis of 0.11 /spl mu/m technology devices. The SCM results are compared with chemical staining data, and the limitations of chemical staining are illustrated. Cross-sectional SCM imaging and the advantages and limitations of the SCM technique are discussed.