High velocity electron injection MOSFETs for ballistic transistors using SiGe/strained-Si heterojunction source structures

In this study, we have experimentally demonstrated, for the first time, the G/sub m/ enhancement due to higher velocity injection in a MOSFET structure with a source SiGe/strained-Si heterojunction (hetero-MOSFETs), compared to those in strained-SOIs (SSOI) and conventional SOIs. We present the concept and the simulated results of the hetero-source MOSFETs, followed by the process steps and experimental G/sub m/ characteristics.