Development of highly robust nano-mixed Hf/sub x/Al/sub y/O/sub z/ dielectrics for TiN/Hf/sub x/Al/sub y/O/sub z//TiN capacitor applicable to 65nm generation DRAMs

TIT capacitor with Nano-mixed Hf/sub x/Al/sub y/O/sub z/ dielectric was successfully demonstrated to be applicable to 65nm DRAM devices. Nano-mixed Hf/sub x/Al/sub y/O/sub z/ thin film by ALD(Atomic Layer Deposition) showed an excellent thermal stability even up to 700/spl deg/C without any leakage current degradation. Moreover, Nano-mixed films revealed lower leakage current than laminate due to effective nano-scale mixing of HfO/sub 2/ and Al/sub 2/O/sub 3/TiN/Hf/sub x/Al/sub y/O/sub z//TiN capacitor turned out to be applicable to 65nm DRAM showing low EOT of 11/spl Aring/ and low leakage of 1 fA/cell.