Simulation of bandgap in MOVPE selective area growth of InGaAsP-based photonic integrated circuits

A good deal of consideration is needed in designing the growth masks to get the intended bandgap profile due to a complex interplay of chemical reactions and physical effects such as gas phase diffusion and surface migration. This work presents a simulation tool for selective area growth metal-organic vapor epitaxy (SAG-MOVPE) of InGaAsP-based photonic integrated circuits.