A 30 GHz-band oscillator coupled with a dielectric resonator using flip-chip bonding technique

This paper presents a 30 GHz-band oscillator with a temperature stable dielectric resonator (DR). The DR is formed incorporating metalized through holes in a dielectric substrate. An oscillator MMIC is stacked on the DR using flip-chip bonding. A fabricated dielectric resonator oscillator (DRO) shows an output power of larger than +10 dBm and a phase noise of less than -90 dBc/Hz at 1 MHz-offset with an oscillation frequency of around 31.7 GHz. The frequency change is /spl plusmn/315 ppm over a temperature range from -25 to +100 /spl deg/C. The size of the DRO is 4.3 mm /spl times/ 3.8 mm /spl times/ 0.4 mm.