Novel achievements in the understanding and suppression of parasitic minority carrier currents in P/sup -/ epitaxy/P/sup ++/ substrate smart power technologies

In this paper, parasitic electron currents in P/sup -//P/sup ++/ substrates are thoroughly investigated by the results of numerical simulations, the predictions of an analytical model, and experiments. An optimization of the protection technique, which does not require the addition of a deep trench isolation, and allows similar results in the suppression of the parasitic currents, is proposed.