A high breakdown voltage IC with lateral power device based on SODI structure

A high-performance power technology has been developed, in which a conventional SOI lateral power device is merged with novel thick film technology on the backside of its substrate, such as a silicon on double insulator (SODI) structure. In addition to realizing a high breakdown voltage performance, with the assumption of 1.2 kV class applications, the SODI structure has mainly two advantages. One is that a low cost-performance of the initial SOI substrate can be achieved, because the design of the initial buried oxidation layer thickness is free. Another one is a huge reduction in the heat resistance of the power device, because a back metal electrode is formed just under the device.