Influence of the design parameters on the performance of 1.7 kV, NPT, planar clustered insulated gate bipolar transistor (CIGBT)

In this paper, the performance of a 25 A 1.7 kV non punch through clustered insulated gate bipolar transistor, fabricated under a manufacturing environment is highlighted. In particular, the influence of the design parameters such as cathode cell spacing and cluster spacing on device performance is studied experimentally and the results are discussed.