A new reference signal generation method for MRAM using a 90-degree rotated MTJ

A new reference signal generation method for high-density MRAM is reported. 0.4/spl times/0.8 /spl mu/m/sup 2/ magnetic tunnel junction (MTJ) elements were successfully integrated with 0.24-/spl mu/m CMOS technology. By using a 90-degree rotated MTJ as a new reference signal generator, the reference resistance could be always located in the exact midpoint between high-resistance state R/sub H/ and low-resistance state R/sub L/ regardless of applied voltage. When tested in 8/spl times/8 MTJ arrays, it is found to show good fidelity to our expectations. So it is supposed that this new method is more favorable for high-density MRAM.