A simple systematic procedure of Si-based spiral inductor design

In this paper, a systematic design procedure, based on Q-curve analysis, and the corresponding high-Q inductor design guidelines have been proposed. Based on the presented guidelines, a phenomenal Q-value increment as high as 122% in 4 nH spiral inductors has been realized by a technique which combines an optimized poly shielding layer and proton implantation treatment. The technique is a promising solution to put inductors on silicon substrates with satisfactory performance for Si-based RFIC applications.