Carrier lifetime in Ge/sup +/ implanted SiGe HBTs structures

This paper reports on carrier lifetime in Ge/sup +/ implanted Si/Si/sub 1-x/Ge/sub x//Si structures extracted from capacitance-transient responses of test MOS capacitors. The emphasis is put on the calculation of effective carrier lifetime in Ge/sup +/ implanted regions based on the refined value of the intrinsic carrier density/bandgap due to implanted germanium.