Application of carrier lifetime control by irradiation to 1.2kV NPT IGBTs

Device simulation, based on an extended recombination model and previously determined recombination center parameters, serves as design tool for carrier-lifetime controlled, state-of-the-art 1.2kV NPT IGBTs. Homogenous and local recombination center profiles are considered. The sensitivity of important device characteristics to the type of the recombination center profile is investigated in simulation and experiment. A possible application, the improvement of reverse leakage properties of reverse blocking capable NPT IGBTs, is discussed.