High-peak-power sub-nanosecond diode-pumped passively Q-switched microchip laser

The lower emission cross section of the c-cut Nd:YVO/sub 4/ and Nd:GdVO/sub 4/ crystals can enhance the passive Q-switching effect to produce a peak power 10 times higher than that obtained with the a-cut crystals. The studied performance of the resonator formed indicate that c-cut Nd:GdVO/sub 4/ and Nd:YVO/sub 4/ crystal are very convenient material for short pulse (sub-nanosecond) and high-peak power (>10 kW) lasers. It is demonstrated that at 2 W pump power, 17.8 /spl mu/J pulses of 0.85 ns duration at a pulse repetition rate of 13 kHz can be generated in the c-cut Nd:GdVO/sub 4/ and 18 /spl mu/J pulses of 0.85 ns duration at a pulse repetition rate of 13.5 kHz at 2.4 W pump power in the c-cut Nd:YVO/sub 4/. The main advantage of the crystals is the combination of its high absorption cross section, wide absorption bandwidth, and low intrinsic losses.