Structural and electrical characterizations of long pulse XeCl excimer laser annealed Al/sup +/ ion implanted 4H-SiC

In this paper, we demonstrate the possibility to anneal the Al/sup +/ ion-implantation induced damage into 4H-SiC by laser processing using a new XeCl excimer source of 200 ns pulse duration (/spl sim/ten times longer than the classical one). The laser irradiation conditions corresponding to solid phase annealing were estimated from thermal simulations and confirmed experimentally by SIMS measurements.