A test structure for two-dimensional analysis of MOSFETs by hot-carrier-induced photoemission

A test structure and method for two-dimensional analysis of fabrication process and reliability of MOSFET using a photoemission microscope are presented. Arrays of 20/spl times/10(=200) MOSFETs were successfully measured at a time and evaluated the fluctuation of their characteristics. The fluctuation of hot-carrier-induced photoemission intensity was larger as gate length becomes smaller. Although the intensity fluctuation of photoemission in the same MOSFET was within small range, the fluctuation all over the MOSFET array was relatively large and independent of the position in the array.