The inhomogeneity of Co/p-poly-Si/sub 0.84/Ge/sub 0.16/ Schottky contact

The Schottky junction Co/p-poly-SiGe was formed by deposition of Co on p-poly-SiGe thin film through ion beam sputtering (IBS) technique. Inhomogeneity of the Co/p-poly-SiGe contact was studied by I-V-T method in a wide temperature range. The parameters of the Schottky structure can be extracted from the thermionic emission model precisely. Our results show that both the Schottky barrier height and ideality factor are strongly temperature dependent and weakly bias dependent. It is ascribed to the spatial inhomogeneity of the Co/p-poly-SiGe interface. And it may be helpful to can explain some observed deviations from the ideal metal-semiconductor contact mode.