Reliably designing InGaAs-InAlAs strained multiple-quantum-well structures for amplitude modulation

A simulation of the performance parameters of amplitude modulators was carried out for InGaAs-InAlAs multiple-quantum-well structures for operation at 1.55 /spl mu/m. The device parameters were estimated from the calculated absorption spectra with applied reverse bias and from the photoluminescence spectra. The theoretically determined results are compared with the experimental data obtained from the measured photocurrent spectra with light incident in the direction perpendicular to the layers. Good agreement was achieved between experimental and theoretical data, providing a reliable way for designing efficient amplitude modulators. The effect of residual doping level and pre-bias on device parameters is discussed.