Potential and field distributions in LDD structures in the subthreshold region

An analytical model for the potential and the field distributions in LDD MOSFET structures operating in the subthreshold region is developed by solving the quasi-two-dimensional Poisson equations. The model includes the effect of the gate voltage, but ignores the mobile charge density. The result is useful for predicting the incipient breakdown in lateral power MOSFETs that are designed to block high voltages when off.<
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