Extended Oxide-Trap extraction method to low frequencies for irradiated MOS transistors

We present an extraction of the OTCP (Oxide-Trap based on Charge-Pumping method from high frequencies (HF) to low frequencies (LF). Thus using the LF-OTCP method, the interface-trap and border-trap are simultaneously involved in charge pumping (CP) current (I/sub cp/) measurements. We have found that radiation-induced oxide-trap (/spl Delta/N/sub ot/) is only dependent on /spl Delta/V/sub th/ (threshold voltage shift). /spl Delta/I/sub cpm,h/ (augmentation of maximum CP current at high frequencies), and /spl Delta/I/sub cpm,l/ (augmentation of maximum CP current at low frequencies). Where /spl delta/I/sub cpm,l/ and /spl Delta/I/sub cpm,h/ can be easily obtained from vertical shift of charge pumping curve at low and high frequencies respectively, and /spl Delta/V/sub th/ from lateral one.