Integration of complementary EDMOS in a standard 0.35 /spl mu/m CMOS technology for 40 V applications

This paper presents the design of optimized RESURF Extend Drain MOSFET (EDMOS) for 40 V applications. The EDMOS devices are compatible with a standard 0.35 /spl mu/m CMOS process. Breakdown voltages of 41 V for n-channel with a specific on-resistance of 0.43 m/spl Omega/cm/sup 2/ and a 47 V p-channel with a specific on-resistance of 1.41 m/spl Omega/cm/sup 2/ are realized without compromising the performance of standard components in the CMOS technology.