Source/drain area shrinkage using a novel contact and interconnect technology for CMOS application

A novel small source/drain (S/D) contact (SSDC) formation technology has been developed. In the SSDC structure, self-aligned contacts to small S/D regions can be formed without any contact holes, because a local TiSi/sub 2/ interconnect on the isolation fields is directly connected with the lining of the S/D regions. In the SSDC process, the local TiSi/sub 2/ interconnects were formed from the reaction of a sputter deposited amorphous-Si/Ti bilayer. The local TiSi/sub 2/ interconnect is thermally stable up to 900 degrees C furnace annealing. This self-aligned contact structure combined with TiSi/sub 2/ interconnect can realize a small S/D area which can bring about a new multilevel interconnect scheme for 0.5- mu m ULSIs.<
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