Characteristics of a new BBOS with an AlGaAs-/spl delta/(n/sup +/)-GaAs-InAlGaP collector structure

Two-terminal switching performances are observed in a new AlGaAs-GaAs-InAlGaP npn bulk-barrier optoelectronic switch (BBOS) with an AlGaAs-/spl delta/(n/sup +/)-GaAs-InAlGaP collector structure. The device shows that the switching action takes place from a low-current state to a high-current state through a region of negative differential resistance (NDR). The transition from either state to the other may be induced by an appropriate optical or electrical input. It is seen that the effect of illumination increases the switching voltage V/sub s/, holding voltage V/sub H/, and holding current I/sub H/, and decreases the switching current I/sub S/, which is quite different from other results reported. In addition, it possesses obvious NDR even up to 160/spl deg/C. This high-temperature performance provides the studied device with potential high-temperature applications.