A graphical method to determine the generation parameters from pulsed MIS capacitors

A graphical method for the determination of semiconductor generation parameters has been developed. This technique is based on two graphs which are plotted from a general expression of capacitance-time (C-t) behavior and a measured C-t curve of a pulsed metal-insulator-semiconductor capacitor (MIS-C). The generation lifetime and the surface generation velocity obtained by this method agree very well with those obtained by the Zerbst technique.<
>