The impact of three-dimensional effects on EEPROM cell performance

Device simulation is used to investigate three-dimensional effects in small electrically erasable programmable read-only memory (EEPROM) cells. Threshold voltage, tunnel currents, write speed, and the effects of misregistration are characterized for a structurally parameterized generic FLOTOX EEPROM cell. The results indicate considerable sensitivity to three-dimensional effects. Design insights for small EEPROM cells are discussed.<
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