Edge breakdown in 4H-SiC avalanche photodiodes

We report suppression of edge breakdown in mesa-structure SiC avalanche photodiodes (APDs) by employing a 10/spl deg/ sidewall bevel. These devices exhibit low dark currents, <10 pA for a 160-/spl mu/m-diameter device, at the onset of avalanche gain. Two-dimensional raster scans of both beveled and nonbeveled devices, fabricated from the same wafer, show the photocurrent as a function of position and illustrate the spatial properties of avalanche gain in SiC APDs.