A 65 nm CMOS technology with a high-performance and low-leakage transistor, a 0.55 /spl mu/m/sup 2/ 6T-SRAM cell and robust hybrid-ULK/Cu interconnects for mobile multimedia applications

This paper presents a 65 nm CMOS technology for mobile multimedia applications. The reduction of interconnect capacitance is essential for high-speed data transmission and small power consumption for mobile core chips. We have chosen a hybrid ULK structure which consists of NCS (nano-clustering silica; k=2.25) at the wire level and SiOC (k=2.9) at the via level. Although NCS is a porous material, the NCS/SiOC structure has sufficient mechanical strength to endure CMP pressure and wire bonding. Successfully fabricated 200 nm-pitch hybrid-ULK/Cu interconnects and a high-performance and low-leakage transistors meet the electrical targets from the circuit requirements. Moreover, an embedded 6T-SRAM with a 0.55 /spl mu/m/sup 2/ small cell size has been achieved.