Fabrication of pentacene organic field-effect transistors containing SiO/sub 2/ nanoparticle thin film as the gate dielectric

Pentacene organic field-effect transistors (OFETs) were fabricated and investigated with thermal oxide and a self-assembled SiO/sub 2/ (SA-SiO/sub 2/) nanoparticle thin-film as the gate dielectrics. SA-SiO/sub 2/ film functions well as a gate dielectric with a breakdown field larger than 0.57 MV/cm and leakage current less than 2 nA/mm/sup 2/ with an applied voltage of 20 V. Being a low-cost and low-temperature process, self-assembly is extremely suitable for OFET fabrication. Dual-gate pentacene FETs containing SA-SiO/sub 2/ thin-film are presented as a new structure with good performance.