Wideband cryogenic on-wafer measurements at 20-295 K and 50-110 GHz

A measurement system has been developed for cryogenic on-wafer characterization at 50-110 GHz. The measurement system allows on-wafer S-parameter measurements of active and passive devices at this frequency range. The S-parameters of active devices can be measured as function of frequency, temperature, and bias conditions. As an example of cryogenic on-wafer measurements, measured S-parameters of InP HEMTs are presented at temperatures of 20, 80, 160, and 295 K and in the frequency range of 50-110 GHz.