Borderless nitride requirements for embedded non-volatile deep sub-micron technologies

In this paper, we evaluate the extra requirements that borderless materials, widely used in standard logic technologies as stop layers during oxide etch, have to fulfil for high-voltage non-volatile applications. We also evaluate the effect of nitride conduction on charging damage during contact etch. In particular, it is demonstrated that nitride layers can act as antennas, thus causing charging damage.