Modelling and simulating the selective epitaxial growth of silicon under consideration of anisotropic growth rates

This work presents a new model for the simulation of thin layer deposition and etching processes. Especially suited for the simulation of highly anisotropic processes, the frontier model is introduced in the context of selective epitaxial growth of silicon. The general approach to this new simulation model is described, and the simulation of selective epitaxial growth is validated against experimental results.