Modeling of SiGe power HBT intermodulation distortion using HICUM

Single- and two-tone power characteristics of "true" Si/SiGe HBTs were measured with fundamental frequencies up to 5 GHz. For obtaining accurate information on harmonic and, in particular, intermodulation distortion, careful de-embedding of parasitics was performed using a three-step method. HICUM simulations show good agreement with measured data.