Vertical p-channel double-gate MOSFETs

Double-gate MOSFETs have drawn increasing interest within the last years because of their capability to reduce short channel effects. In this work a p-channel double-gate MOSFET layout was realised. Based on epitaxial growth and subsequent ion implantation, the p/n/p-doping profile is implemented in vertical sequence. P-channel devices with channel lengths of 50 nm and gate oxide thickness of 6.6 nm show transconductances of 480 /spl mu/S//spl mu/m, subthreshold slope of 126 mV/dec and DIBL of 80 mV/V.