A highly integrated quad-band GSM TX-front-end-module

In this paper, we describe a highly integrated, quad-band (UGSM/EGSM/DCS/PCS), transmit, front-end module (TX-FEM) integrating power amplifiers, a PA controller, T/R switches, a switch controller, a dual-band directional detector/coupler, a diplexer, matching networks and harmonic filters in a single, 50 /spl Omega/ input and output, 9/spl times/10/spl times/1.5mm package. The module employs InGaP/GaAs HBT, AlGaAs/InGaAs/AlGaAs PHEMT, GaAs Schottky/passive, and Si Schottky/bipolar/CMOS semiconductor technologies and to the authors' best knowledge demonstrates the highest level of integration for a TX-FEM ever reported The module utilizes the excellent performance and ruggedness characteristics of the Skyworks fourth generation HBT process and features 34dBm Pout with 45% PAE GSM and 31dBm Pout and 36% PAE DCS/PCS performance, while meeting a VSWR>20:1 open loop ruggedness spec.